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供应海力士H9HKNNNCTUMUBR-NMH存储芯片LPDDR4 3733MHz 32Gb BGA366


发布日期:2019-3-12 14:59:07


全新IC,一手货源,量大价优,可长期供货,欢迎来电或面议

手机IC存储芯片

品牌:海力士

型号:H9HKNNNCTUMUBR-NMH

类别:LPDDR4

容量:32Gb

频率:3733MHz

封装:BGA366

1601770201886122


2501770201822207

475916759201855772525916759201860989

Features

 

· VDD1 = 1.8V (1.7V to 1.95V)
· VDD2, VDDCA and VDDQ = 1.1V (1.06 to 1.17)
· VSSQ terminated DQ signals (DQ, DQS_t, DQS_c, DMI)
· Single data rate architecture for command and address;
- all control and address latched at rising edge of the clock
· Double data rate architecture for data Bus;
- two data accesses per clock cycle
· Differential clock inputs (CK_t, CK_c)
· Bi-directional differential data strobe (DQS_t, DQS_c)
- Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c)
· DMI pin support for write data masking and DBIdc functionality
· Programmable RL (Read Latency) and WL (Write Latency)
· Burst length: 16 (default), 32 and On-the-fly
- On the fly mode is enabled by MRS
· Auto refresh and self refresh supported
· All bank auto refresh and directed per bank auto refresh supported
· Auto TCSR (Temperature Compensated Self Refresh)
· PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
· Background ZQ Calibration

 

Speed

 

Part NumberSpeed
Speed
L200
M266 2-2-2

 

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